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2SK1169, 2SK1170
Silicon N Channel MOS FET
REJ03G0916-0200 (Previous: ADE-208-1254) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D G 1. Gate 2. Drain (Flange) 3. Source
1
2
S 3
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1169, 2SK1170
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C 2SK1169 2SK1170 VGSS ID ID(pulse)* IDR 2 Pch* Tch Tstg
1
Symbol VDSS
Ratings 450 500 30 20 80 20 120 150 -55 to +150
Unit V V A A A W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage 2SK1169 2SK1170 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 450 500 30 -- -- 2.0 -- -- 10 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.20 0.22 16 2800 780 90 32 115 200 90 1.0 500 Max -- -- 10 250 3.0 0.25 0.27 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V 3 ID = 10 A, VGS = 10 V * ID = 10 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz ID = 10 A, VGS = 10 V, RL = 3
3
Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain 2SK1169 current 2SK1170 Gate to source cutoff voltage Static drain to source on 2SK1169 state resistance 2SK1170 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test
IF = 20 A, VGS = 0 IF = 20 A, VGS = 0, diF/dt = 100 A/s
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1169, 2SK1170
Main Characteristics
Power vs. Temperature Derating
100 150 30
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
10 D C
PW
10
0 s
s
10 3 1.0
1
= 10 m s
C
100
m
(1
O
s
pe
ra tio
n
(T
Sh
=
50
Operation in this area is limited by RDS (on)
0.3 0.1 Ta = 25C 1 3 10
ot ) 25 C )
2SK1170 2SK1169 30 100 300 1,000
0
50
100
150
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
50 10 V 20 7V 6V
Typical Transfer Characteristics
VDS = 20 V Pulse Test
Drain Current ID (A)
30
Pulse Test
Drain Current ID (A)
40
16
12
20
5V
8 4 75C -25C TC = 25C
10 VGS = 4 V 0 10 20 30 40 50
0
2
4
6
8
10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS (on) (V)
10 Pulse Test
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
5 Pulse Test
8
Static Drain to Source on State Resistance RDS (on) ()
2 1.0 0.5
6 20 A 4 10 A ID = 5 A 0 4 8 12 16 20
VGS = 10 V 15 V
0.2 0.1 0.05 1 2 5 10 20
2
50
100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1169, 2SK1170
Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance yfs (S)
1.0 VGS = 10 V Pulse Test
50 VDS = 20 V Pulse Test -25C TC = 25C 75C
0.8
20 10 5 2 1.0 0.5 0.2
0.6 ID = 20 A 0.4 10 A 5A
0.2
0 -40
0
40
80
120
160
0.5
1.0
2
5
10
20
Case Temperature TC (C)
Drain Current ID (A)
Body to Drain Diode Reverse Recovery Time
5,000 10,000 di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test
Typical Capacitance vs. Drain to Source Voltage
VGS = 0 f = 1 MHz
Reverse Recovery Time trr (ns)
Capacitance C (pF)
2,000 1,000 500
Ciss 1,000 Coss
200 100 50 0.5
100 Crss 10
1.0
2
5
10
20
50
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
20 500
Drain to Source Voltage VDS (V)
500
Gate to Source Voltage VGS (V)
VDD = 100 V 250 V 400 V
Switching Time t (ns)
400
16
200 100 50 tf tr
td (off)
300
VDS
12 VGS 8 V DD = 400 V 250 V 100 V ID = 20 A
200
td (on) 20 10 5 0.5 VGS = 10 V VDD = 30 V PW = 2 s, duty < 1%
* *
100
4
0
40
80
120
160
0 200
1.0
2
5
10
20
50
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1169, 2SK1170
Reverse Drain Current vs. Source to Drain Voltage
20
Reverse Drain Current IDR (A)
16
Pulse Test
12
8 5 V, 10 V VGS = 0, -10 V 0 0.4 0.8 1.2 1.6 2.0
4
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance S (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3 D=1 0.5 0.3
0.2
0.1
0.05
0.02 0.01 t Pulse ho 1S
1.0
TC = 25C
0.1
0.03
ch-c (t) = S (t) * ch-c ch-c = 1.04C/W,TC = 25C PDM D = PW T PW T 100 1m 10 m 100 m 1 10
0.01 10
Pulse Width PW (S)
Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vout 50 Vin = 10 V . VDD = 30 V . td (on) Vin 10 %
Waveforms
90 %
10 % 90 % tr 90 % td (off)
10 %
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
2SK1169, 2SK1170
Package Dimensions
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
Package Name TO-3P / TO-3PV
MASS[Typ.] 5.0g
5.0 0.3
Unit: mm
4.8 0.2 1.5
15.6 0.3
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 0.2 3.6 0.9 1.0
18.0 0.5
0.6 0.2
5.45 0.5
5.45 0.5
Ordering Information
Part Name 2SK1169-E 2SK1170-E 360 pcs 360 pcs Quantity Box (Tube) Box (Tube) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
0.3
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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